* were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board
* mounted components.
MTB75N05HD Datasheet (236.42 KB)
MTB75N05HD
236.42 KB
Power mosfet.
MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avala.
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