Datasheet Specifications
- Part number
- MTW10N100E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 122.12 KB
- Datasheet
- MTW10N100E_ONSemiconductor.pdf
- Description
- Power MOSFET
Description
MTW10N100E co m Preferred Device Power MOSFET t e 10 Amps, e 1000 Volts N *Channel TO *247 This high voltage MOSFET uses an advanced .
Features
* afely operated into an inductive load; however, snubbing reduces switching losses. 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 1000 100 Coss Crss 1000 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance VariationApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transient. 4U . w w at . D w h S a http://onsemMTW10N100E Distributors
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