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MTW10N100E Power MOSFET

MTW10N100E Description

MTW10N100E co m Preferred Device Power MOSFET t e 10 Amps, e 1000 Volts N *Channel TO *247 This high voltage MOSFET uses an advanced .

MTW10N100E Features

* afely operated into an inductive load; however, snubbing reduces switching losses. 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 1000 100 Coss Crss 1000 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation

MTW10N100E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transient. 4U . w w at . D w h S a http://onsem

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