* afely operated into an inductive load; however, snubbing reduces switching losses. 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 1000 100 Coss Crss 1000 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation
MTW10N100E Datasheet (122.12 KB)
MTW10N100E
122.12 KB
Power mosfet.
MTW10N100E co
m
Preferred Device
Power MOSFET t e 10 Amps, e 1000 Volts
N
*Channel TO
*247
This high voltage MOSFET uses an advanced .
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