MTW10N100E Datasheet - ON Semiconductor

MTW10N100E Power MOSFET

MTW10N100E co m Preferred Device Power MOSFET t e 10 Amps, e 1000 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Design.

MTW10N100E Features

* afely operated into an inductive load; however, snubbing reduces switching losses. 10000 VGS = 0 V Ciss TJ = 25°C C, CAPACITANCE (pF) 1000 100 Coss Crss 1000 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation

MTW10N100E_ONSemiconductor.pdf