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PCFFS2065AF SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 20 A, 650 V, D1, Die PCFFS2065AF DIE DATA SHEET www.onsemi.com Anode .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 95 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits For Additional Product Information and Electrical Characteristics on Package Refer to FFSP2065A product datasheet. Die Information
* Wafer Diameter: 6 inch
* Die Size: 2,240 × 2,240 mm (

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