PCFFS3065AF

SiC Schottky Diode

ON Semiconductor

PCFFS3065AF Features

* Max Junction Temperature 175°C

* Avalanche Rated 180 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery Applications

* General Purpose

* SMPS, Solar Inve

PCFFS3065AF General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the n.

PCFFS3065AF Datasheet (138.35 KB)