PCFFS3065AF - SiC Schottky Diode

ON Semiconductor

PCFFS3065AF Datasheet Preview — Preview of PCFFS3065AF PDF

Datasheet Details

Part number	PCFFS3065AF
Manufacturer	ON Semiconductor ↗
File Size	138.35 KB
Description	SiC Schottky Diode
Datasheet	PCFFS3065AF-ONSemiconductor.pdf

PCFFS3065AF Product details

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.

Features

Max Junction Temperature 175°C.
Avalanche Rated 180 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.

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Published: Jul 18, 2024 |