PCFFS3065AF SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 30 A, 650 V, D1, Die PCFFS3065AF DIE DATA SHEET www.onsemi.com Anode .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: PCFFS3065AF
Manufacturer: ON Semiconductor ↗
File Size: 138.35 KB
Datasheet: PCFFS3065AF-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 180 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits For Additional Product Information and Electrical Characteristics on Package Refer to FFSP3065A product datasheet. Die Information
* Wafer Diameter: 6 inch
* Die Size: 2,700 × 2,700 mm (

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PCFFS3065AF SiC Schottky Diode ON Semiconductor

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