PCFFS10120AF - SiC Schottky Diode
Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material * Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.
Its high reli
PCFFS10120AF Features
* Max Junction Temperature 175°C
* Avalanche Rated 105 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery Applications
* General Purpose
* SMPS, Solar In
