PCFFS10120AF

SiC Schottky Diode

ON Semiconductor

PCFFS10120AF Features

* Max Junction Temperature 175°C

* Avalanche Rated 105 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery Applications

* General Purpose

* SMPS, Solar In

PCFFS10120AF General Description

Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material

* Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reli.

PCFFS10120AF Datasheet (239.70 KB)