PCFFS10120AF SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 10 A, 1200 V, D1, Die PCFFS10120AF .
Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor mater.

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Datasheet Specifications

Part number: PCFFS10120AF
Manufacturer: ON Semiconductor ↗
File Size: 239.70 KB
Datasheet: PCFFS10120AF-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 105 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits Die Information
* Wafer Diameter: 6 inch
* Die Size: 2,280 × 2,280 mm (Include Scribe Lane)
* Metallization
* Top: Ti / TiN / AI 4 mm
* Back: Ti/ NiV / Ag

PCFFS10120AF Distributors

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PCFFS10120AF SiC Schottky Diode ON Semiconductor

ON Semiconductor PCFFS10120AF-like datasheet