PCFFS10120AF - SiC Schottky Diode

ON Semiconductor

PCFFS10120AF Datasheet Preview — Preview of PCFFS10120AF PDF

Datasheet Details

Part number	PCFFS10120AF
Manufacturer	ON Semiconductor ↗
File Size	239.70 KB
Description	SiC Schottky Diode
Datasheet	PCFFS10120AF-ONSemiconductor.pdf

PCFFS10120AF Product details

Description

Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. voltage conditions.

Features

Max Junction Temperature 175°C.
Avalanche Rated 105 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.

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Published: Jul 18, 2024 |