UF3C065030K3S - SiC Cascode JFET

ON Semiconductor

UF3C065030K3S Datasheet Preview — Preview of UF3C065030K3S PDF

Datasheet Details

Part number	UF3C065030K3S
Manufacturer	ON Semiconductor ↗
File Size	452.79 KB
Description	SiC Cascode JFET
Datasheet	UF3C065030K3S-ONSemiconductor.pdf

UF3C065030K3S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices.Available in the TO247-3 package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive l

Features

Typical On-resistance RDS(on), Typ of 27 mW.
Maximum Operating Temperature of 175 C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (Required RC-Snubber Loss Negligible Under Typical Operating Conditions).
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Published: Apr 14, 2025 |