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FDC3535 - P-Channel MOSFET

FDC3535 Description

FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ .
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2. Max rDS(on) = 233 mΩ at VGS = -4. High performance tre.

FDC3535 Applications

* Load Switch
* Synchronous Rectifier S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Singl

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P-Channel MOSFET ON Semiconductor
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