FDC6401N - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDC6401N
Manufacturer	ON Semiconductor ↗
File Size	327.88 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC6401N-ONSemiconductor.pdf

FDC6401N Product details

Description

This Dual N Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V.
Low Gate Charge (3.3 nC).
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
This is a Pb.
Free and Halide Free Device.

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Published: Dec 21, 2023 |