Datasheet Details
- Part number
- FDMS3672
- Manufacturer
- ON Semiconductor ↗
- File Size
- 278.95 KB
- Datasheet
- FDMS3672-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMS3672 Description
MOSFET * N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General .
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications.
FDMS3672 Features
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
* Typ Qg = 31 nC at VGS = 10 V
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* This Device is Pb
* Free, Halide Free and RoHS Complian
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