FDS8672S - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number: FDS8672S
Manufacturer: ON Semiconductor ↗
File Size: 377.02 KB
Datasheet: FDS8672S-ONSemiconductor.pdf
Description: N-Channel MOSFET

FDS8672S Product details

Description

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies.This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic SyncFET technology.

Features

Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A.
Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A.
Includes SyncFET Schottky Body Diode.
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
High Power and Current Handling Capability.
100% Rg (Gate Resistance) Tested.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant.

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N-Channel MOSFET ON Semiconductor

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