FQA11N90-F109 - N-Channel MOSFET

ON Semiconductor

FQA11N90-F109 Datasheet Preview — Preview of FQA11N90-F109 PDF

Datasheet Details

Part number	FQA11N90-F109
Manufacturer	ON Semiconductor ↗
File Size	296.58 KB
Description	N-Channel MOSFET
Datasheet	FQA11N90-F109-ONSemiconductor.pdf

FQA11N90-F109 Product details

Description

This N Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

11.4 A, 900 V, RDS(on) = 960 mW (Max. ) @ VGS = 10 V, ID = 5.7 A.
Low Gate Charge (Typ.72 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant MOSFET.

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Published: Jun 24, 2022 |