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FQP17P10 - P-Channel MOSFET

FQP17P10 Description

MOSFET * P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P *Channel enhancement mode power MOSFET is produced using onsemi’s p.

FQP17P10 Features

* 16.5 A,
* 100 V, RDS(on) = 190 mW (Max. ) at VGS =
* 10 V, ID =
* 8.25 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 100 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating
* This is a Pb
* F

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FQP17P10-like datasheet

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