MTB75N06HD Power MOSFET

ON Semiconductor

MTB75N06HD Description

MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N *Channel D2PAK This Power MOSFET is designed to withstand high energy in the avala.

MTB75N06HD Features

* es. 7000 VDS = 0 V 6000 Ciss 5000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 4000 3000 Crss Ciss 2000 1000 0 10 5 05 VGS VDS Coss Crss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi. com 4 MTB75N0

MTB75N06HD Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

📥 Download Datasheet

MTB75N06HD Datasheet Preview — Preview of MTB75N06HD PDF

Datasheet Details

Part number: MTB75N06HD
Manufacturer: ON Semiconductor ↗
File Size: 282.14 KB
Datasheet: MTB75N06HD-ONSemiconductor.pdf
Description: Power MOSFET

📁 Related Datasheet

MTB75N03HDL - TMOS POWER FET (Motorola)
MTB75N05HD - TMOS POWER FET (Motorola)
MTB7D5N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
MTB-F000329MNHNAA-B - LCD Module (Microtips)
MTB-F000368MNHNAA - LCD Module (Microtips)
MTB001 - High Output Interface Driver ICs (Shindengen Electric)
MTB001D01-1 - LCD Module (CSOT)

📌 All Tags

Power MOSFET ON Semiconductor

ON Semiconductor MTB75N06HD-like datasheet

MTB1306 - Power MOSFET
MTB15N06V - Power Field Effect Transistor
MTB16N25E - High Energy Power FET
MTB23P06V - Power MOSFET
MTB29N15E - Power MOSFET
MTB2N60E - High Energy Power FET