Datasheet4U Logo Datasheet4U.com

MTW6N100E Power MOSFET

MTW6N100E Description

MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N *Channel TO *247 This high voltage MOSFET uses an advanced termination sche.

MTW6N100E Features

* ss 3000 Ciss 2000 1000 0 10 Crss Coss 5 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 100 10 10 Coss Crss 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capac

MTW6N100E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

📥 Download Datasheet

Preview of MTW6N100E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MTW6N60E - TMOS POWER FET (Motorola)
  • MTW10N100E - TMOS POWER FET (Motorola)
  • MTW10N40E - TMOS E-FET POWER FIELD EFFECT TRANSISTOR (Motorola)
  • MTW14N50E - TMOS POWER FET (Motorola)
  • MTW16N40E - TMOS POWER FET (Motorola)
  • MTW23N25E - TMOS POWER FET 23 AMPERES 250 VOLTS (Motorola)
  • MTW24N40E - TMOS POWER FET 24 AMPERES 400 VOLTS (Motorola)
  • MTW26N15E - TMOS POWER FET (Motorola)

📌 All Tags

Power MOSFET ON Semiconductor
ON Semiconductor MTW6N100E-like datasheet