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NTBG060N065SC1 SiC MOSFET

NTBG060N065SC1 Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 .

NTBG060N065SC1 Features

* Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 74 nC)
* Low Output Capacitance (Coss = 133 pF)
* 100% Avalanche Tested
* TJ = 175°C

NTBG060N065SC1 Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storage MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source V

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