* q q q q 0.65 max. 14.5±0.5 0.45
* 0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150
* 55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45
2SD1996
Panasonic Semiconductor
43.85 KB
Silicon pnp transistor.
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
📁 Related Datasheet
2SD1990 - Silicon NPN Triple Diffused Planar Transistor
(Panasonic)
.
2SD1991A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1991A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1320A
6.9±0.1
Unit: mm
1.05 2.5±0.1 (1.45) ±0.05.
2SD1992A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB1321A I Features
• Low collector to em.
2SD1993 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q .
2SD1994A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1.
2SD1995 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q q q q
0.45–0..
2SD1996 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
2SD1997 - Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
.
