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LX723 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX723 Description

polyfet rf devices LX723 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LX723 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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Datasheet Details

Part number
LX723
Manufacturer
Polyfet RF Devices
File Size
37.96 KB
Datasheet
LX723_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
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