RF5110G Datasheet (RF Micro Devices) - 3V GSM POWER AMPLIFIER

RF5110G, 3V GSM POWER AMPLIFIER

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications.

The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applica

RF5110G Features

* Single 2.7V to 4.8V Supply Voltage

* +36dBm Output Power at 3.5V

* 32dB Gain with Analog Gain Control

* 57% Efficiency

* 800MHz to 950MHz Operation

* Supports GSM and E-GSM 16 15 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2