H5N2008P Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 .

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Datasheet Specifications

Part number: H5N2008P
Manufacturer: Renesas ↗ Technology
File Size: 150.22 KB
Datasheet: H5N2008P_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance
* Low leakage current www. DataSheet4U. com
* High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current

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H5N2008P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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