H5N2008P - Silicon N Channel MOS FET High Speed Power Switching

Product Overview

Renesas Technology

Part number	H5N2008P
Manufacturer	Renesas Technology
File Size	150.22 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2008P Datasheet
Additional preview pages of the H5N2008P datasheet.

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage.

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Published: Aug 16, 2008 |