* Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 90 A)
* Low Ciss Ciss = 9300 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP179N055TUK-E1-AY
* 1 Pure Sn (T
NP179N055TUK Datasheet (328.98 KB)
NP179N055TUK
328.98 KB
N-channel power mosfet.
Preliminary Data Sheet
NP179N055TUK
55 V
* 180 A
* N-channel Power MOS FET Application: Automotive
R07DS1249EJ0100 Rev.1.00
Mar 02, .
📁 Related Datasheet
NP179N04TUK N-Channel MOSFET (Renesas)
NP100N04NUJ MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N04PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N055PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100P02D6 20V P-Channel Enhancement Mode MOSFET (natlinear)
NP100P04PDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P04PLG MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P06PDG P-channel Power MOSFET (Renesas)
NP100P06PDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P06PLG MOS FIELD EFFECT TRANSISTOR (NEC)
