Datasheet4U Logo Datasheet4U.com

H7N1002AB - Silicon N Channel MOS FET High Speed Power Switching

H7N1002AB Description

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com .

H7N1002AB Features

* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag

📥 Download Datasheet

Preview of H7N1002AB PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • H7N1005DL - Silicon N-Channel MOS FET (Renesas)
  • H7N1005DS - Silicon N-Channel MOS FET (Renesas)
  • H7N0203AB - Silicon N-Channel MOSFET (Renesas)
  • H7N0307AB - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307L - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307LD - Silicon N-Channel MOSFET (Renesas)
  • H7N0307LM - Silicon N-Channel MOSFET (Renesas)
  • H7N0307LS - Silicon N-Channel MOSFET (Renesas)

📌 All Tags

Silicon Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology H7N1002AB-like datasheet

H7N1002AB Stock/Price