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HAF2012 Silicon N Channel MOS FET Series Power Switching

HAF2012 Description

www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

HAF2012 Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package nam

HAF2012 Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you

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Silicon Channel MOS FET Series Power Switching Renesas Technology
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