STP9NK60ZFD Datasheet - ST Microelectronics

STP9NK60ZFD N-CHANNEL Power MOSFET

The Fast SuperMESH™ series associates all adINTERNAL SCHEMATIC DIAGRAM vantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast DataSheet4U.com body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. APPLICATIONS HID BALLAST s .

www.DataSheet4U.com STP9NK60ZFD - STF9NK60ZFD STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH™ MOSFET TARGET DATA TYPE STP9NK60ZFD STF9NK60ZFD STB9NK60ZFD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W 3 1 2 s TYPICAL RDS(on) = 0.85 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY DIODE TO-220 .

STP9NK60ZFD Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

STP9NK60ZFD_STMicroelectronics.pdf