LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics

Description

LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY .
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial ap.

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Datasheet Specifications

Part number: LET8180
Manufacturer: STMicroelectronics ↗
File Size: 33.56 KB
Datasheet: LET8180_STMicroelectronics.pdf
Description: RF POWER TRANSISTORS Ldmos Enhanced Technology

Applications

* at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 2 3 5 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate

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LET8180 POWER TRANSISTORS Ldmos Enhanced Technology STMicroelectronics

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