LET8180 Datasheet, Technology, STMicroelectronics

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LET8180

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STMicroelectronics ↗

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📄 Datasheet

Description:

Rf power transistors ldmos enhanced technology. The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial

LET8180 Application

• Applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V.

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LET8180

STMicroelectronics

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