LET8180 Datasheet - STMicroelectronics

LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology

The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its .

LET8180 Datasheet (33.56 KB)

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Datasheet Details

Part number:

LET8180

Manufacturer:

STMicroelectronics ↗

File Size:

33.56 KB

Description:

Rf power transistors ldmos enhanced technology.

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