SCT1000N170 Datasheet - STMicroelectronics

SCT1000N170 Silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCT1000N170 Features

* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A

* High speed switching performance

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Auxiliary

SCT1000N170 Datasheet (300.82 KB)