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SCT1000N170 - Silicon carbide Power MOSFET

SCT1000N170 Description

SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

SCT1000N170 Features

* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances

SCT1000N170 Applications

* Auxiliary power supply for server

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Silicon carbide Power MOSFET STMicroelectronics
STMicroelectronics SCT1000N170-like datasheet