SCT1000N170 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

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Datasheet Specifications

Part number: SCT1000N170
Manufacturer: STMicroelectronics ↗
File Size: 300.82 KB
Datasheet: SCT1000N170-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances

Applications

* Auxiliary power supply for server

SCT1000N170 Distributors

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SCT1000N170 Silicon carbide Power MOSFET STMicroelectronics

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