SCT1000N170 - Silicon carbide Power MOSFET
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC materia
SCT1000N170 Features
* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction temperature capability (TJ = 200 °C) Applications
* Auxiliary
