* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction temperature capability (TJ = 200 °C) Applications
* Auxiliary
SCT1000N170 Datasheet (300.82 KB)
SCT1000N170
300.82 KB
Silicon carbide power mosfet.
SCT1000N170
Datasheet
Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
HiP247
3 2 1
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen.
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