SCT1000N170 Datasheet - STMicroelectronics

SCT1000N170, Silicon carbide Power MOSFET

SCT1000N170 Datasheet Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

datasheet Preview Page 1 from Datasheet4u.com

SCT1000N170-STMicroelectronics.pdf

SCT1000N170 Datasheet Preview — Preview of SCT1000N170 PDF

Datasheet Details

Part number:

SCT1000N170

Manufacturer:

STMicroelectronics ↗

File Size:

300.82 KB

Description:

Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances

Applications

* Auxiliary power supply for server

SCT1000N170 Distributors

📁 Related Datasheet

SCT12A0 SCT12A3 SCT12N60FD SCT12N60P SCT1527 SCT1555

📌 All Tags

SCT1000N170 Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCT1000N170-like datasheet