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SCT10N120AG

Automotive-grade silicon carbide Power MOSFET

SCT10N120AG Features

* HiP247 3 2 1 D(2, TAB)

* AEC-Q101 qualified

* Very tight variation of on-resistance vs. temperature

* Very high operating temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* Motor drives

SCT10N120AG General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCT10N120AG Datasheet (234.21 KB)

Preview of SCT10N120AG PDF

Datasheet Details

Part number:

SCT10N120AG

Manufacturer:

STMicroelectronics ↗

File Size:

234.21 KB

Description:

Automotive-grade silicon carbide power mosfet.

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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