Datasheet4U Logo Datasheet4U.com

SCT10N120AG Automotive-grade silicon carbide Power MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

📥 Download Datasheet

Preview of SCT10N120AG PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very tight variation of on-resistance vs. temperature
* Very high operating temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* Motor drives
* EV chargers
* High voltage DC-DC converters

SCT10N120AG Distributors

📁 Related Datasheet

SCT12A0 SCT12A3 SCT12N60FD SCT12N60P SCT1527 SCT1555

📌 All Tags

SCT10N120AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics
STMicroelectronics SCT10N120AG-like datasheet
SCT10N120
SCT1000N170
SCT1000N170AG
SCT011H75G3AG
SCT012H90G3AG