SCT10N120AG Datasheet - STMicroelectronics

SCT10N120AG, Automotive-grade silicon carbide Power MOSFET

SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

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Datasheet Details

Part number:

SCT10N120AG

Manufacturer:

STMicroelectronics ↗

File Size:

234.21 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very tight variation of on-resistance vs. temperature
* Very high operating temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* Motor drives
* EV chargers
* High voltage DC-DC converters

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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