SCT10N120 - 1200V 12A Silicon carbide Power MOSFET
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties
SCT10N120 Features
* HiP247 3 2 1 D(2, TAB)
* Very low RDS(on) over the entire temperature range
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode
* Low capacitance Applications
* AC-DC converters
* DC
