SCT10N120 1200V 12A Silicon carbide Power MOSFET

STMicroelectronics

Description

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package .
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

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Datasheet Specifications

Part number: SCT10N120
Manufacturer: STMicroelectronics ↗
File Size: 191.07 KB
Datasheet: SCT10N120-STMicroelectronics.pdf
Description: 1200V 12A Silicon carbide Power MOSFET

Features

* HiP247 3 2 1 D(2, TAB)
* Very low RDS(on) over the entire temperature range
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

Applications

* AC-DC converters
* DC-DC converters
* Motor drives
* Solar inverters (string and central)

SCT10N120 Distributors

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SCT10N120 1200V 12A Silicon carbide Power MOSFET STMicroelectronics

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