SCT10N120 Datasheet - STMicroelectronics

SCT10N120 1200V 12A Silicon carbide Power MOSFET

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties .

SCT10N120 Features

* HiP247 3 2 1 D(2, TAB)

* Very low RDS(on) over the entire temperature range

* Very high operating junction temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* AC-DC converters

* DC

SCT10N120-STMicroelectronics.pdf