SCT1000N170AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT1000N170AG Datasheet Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

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Datasheet Specifications

Part number: SCT1000N170AG
Manufacturer: STMicroelectronics ↗
File Size: 320.32 KB
Datasheet: SCT1000N170AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1
* AEC-Q101 rev. C qualified
* Very fast and robust intrinsic body diode
* Low capacitances

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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SCT1000N170AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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