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SCT1000N170AG

Automotive-grade silicon carbide Power MOSFET

SCT1000N170AG Features

* Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1

* AEC-Q101 rev. C qualified

* Very fast and robust intrinsic body diode

* Low capacitances

* Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications

SCT1000N170AG General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCT1000N170AG Datasheet (320.32 KB)

Preview of SCT1000N170AG PDF

Datasheet Details

Part number:

SCT1000N170AG

Manufacturer:

STMicroelectronics ↗

File Size:

320.32 KB

Description:

Automotive-grade silicon carbide power mosfet.

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SCT1000N170AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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