SCT1000N170AG - Automotive-grade silicon carbide Power MOSFET
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC materia
SCT1000N170AG Features
* Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1
* AEC-Q101 rev. C qualified
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications
