SCTHS200N120G3AG Datasheet, Mosfet, STMicroelectronics

✔ SCTHS200N120G3AG Features

Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed

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SCTHS200N120G3AG

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📄 Datasheet

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Automotive-grade silicon carbide power mosfet. NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFE

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STMicroelectronics

Silicon Carbide MOSFET, Single, N Channel, 170 A, 1.2 kV, 13 Milliohms, STPAK, 4 Pins - Bulk (Alt: SCTHS200N120G3AG)

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SCTHS200N120G3AG

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SCTHS200N120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics