SCTHS250N120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTHS250N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(.
NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTHS250N120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 318.86 KB
Datasheet: SCTHS250N120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code 23 SCTHS250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ ID 239 A 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high operatin

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📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTHS250N120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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