* Order code 23 SCTHS250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ ID 239 A 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Very high operatin
SCTHS250N120G3AG Datasheet (318.86 KB)
SCTHS250N120G3AG
318.86 KB
Automotive-grade silicon carbide power mosfet.
SCTHS250N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(.
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