SCTHS250N120G3AG Datasheet - STMicroelectronics

SCTHS250N120G3AG Automotive-grade silicon carbide Power MOSFET

SCTHS250N120G3AG Features

* Order code 23 SCTHS250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ ID 239 A 1

* AEC-Q101 qualified

* Very low RDS(on) over the entire temperature range

* High speed switching performances

* Very fast and robust intrinsic body diode

* Very high operatin

Datasheet Details

SCTHS250N120G3AG

318.86 KB

Automotive-grade silicon carbide power mosfet.

📁 Related Datasheet

SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTHS200N120G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTHS300N75G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTH35N65G2V-7 Silicon carbide Power MOSFET (STMicroelectronics)

SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

TAGS

SCTHS250N120G3AG Distributor