SCTHS250N120G3AG Datasheet, Mosfet, STMicroelectronics

SCTHS250N120G3AG Features

• Mosfet Order code 23 SCTHS250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ ID 239 A 1
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• H

PDF File Details

Part number:

SCTHS250N120G3AG

Manufacturer:

STMicroelectronics ↗

File Size:

318.86kb

Download:

📄 Datasheet

Description:

Automotive-grade silicon carbide power mosfet. NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFE

TAGS

📁 Related Datasheet

SCTHS250N65G2G - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .

SCTHS250N65G3 - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .

SCTHS200N120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTHS200N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(.

SCTHS300N75G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3).

SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-.

SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH100N65G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) G.

SCTH35N65G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Featur.

SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .

SCTH40N120G2V-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS.

SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .