SCTHS250N65G3 - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTHS250N65G3 Description

SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCTHS250N65G3 Features

* Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

📥 Download Datasheet

SCTHS250N65G3 Datasheet Preview — Preview of SCTHS250N65G3 PDF

Datasheet Details

Part number: SCTHS250N65G3
Manufacturer: STMicroelectronics ↗
File Size: 568.29 KB
Datasheet: SCTHS250N65G3-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

📁 Related Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

📌 All Tags

Automotive-grade silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTHS250N65G3-like datasheet

SCTHS250N65G2G - Automotive-grade silicon carbide Power MOSFET
SCTHS250N120G3AG - Automotive-grade silicon carbide Power MOSFET
SCTHS200N120G3AG - Automotive-grade silicon carbide Power MOSFET
SCTHS300N75G3AG - Automotive-grade silicon carbide Power MOSFET
SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET

SCTHS250N65G3 Stock/Price