SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTHS250N65G3
Manufacturer: STMicroelectronics ↗
File Size: 568.29 KB
Datasheet: SCTHS250N65G3-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

SCTHS250N65G3 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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