* Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
SCTHS250N65G3 Datasheet (568.29 KB)
SCTHS250N65G3
568.29 KB
Automotive-grade silicon carbide power mosfet.
SCTHS250N65G3
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package
4 1 4
32
STPAK
Drain(4)
Gate(3)
.
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