SCTHS250N65G3 Datasheet - STMicroelectronics

SCTHS250N65G3, Automotive-grade silicon carbide Power MOSFET

SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Details

Part number:

SCTHS250N65G3

Manufacturer:

STMicroelectronics ↗

File Size:

568.29 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

SCTHS250N65G3 Distributors

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SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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