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SCTHS300N75G3AG Automotive-grade silicon carbide Power MOSFET

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Description

SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3).
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Features

* Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A
* AEC-Q101 qualified 1
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin fo

SCTHS300N75G3AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTHS300N75G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics
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