Datasheet Details
- Part number
- SCTHS250N65G2G
- Manufacturer
- STMicroelectronics ↗
- File Size
- 260.34 KB
- Datasheet
- SCTHS250N65G2G-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCTHS250N65G2G Description
SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
SCTHS250N65G2G Features
* Order code
23
SCTHS250N65G2G
VDS 650 V
RDS(on) typ. 8.0 mΩ
ID 250 A
* AEC-Q101 qualified
1
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
SCTHS250N65G2G Applications
* Main inverter (electric traction)
📁 Related Datasheet
📌 All Tags
SCTHS250N65G2G Stock/Price