* Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A
* AEC-Q101 qualified 1
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Ma
SCTHS250N65G2G Datasheet (260.34 KB)
SCTHS250N65G2G
260.34 KB
Automotive-grade silicon carbide power mosfet.
SCTHS250N65G2G
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package
4 1 4
32
STPAK
Drain(4)
Gate(3)
.
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