SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTHS250N65G2G
Manufacturer: STMicroelectronics ↗
File Size: 260.34 KB
Datasheet: SCTHS250N65G2G-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A
* AEC-Q101 qualified 1
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Main inverter (electric traction)

SCTHS250N65G2G Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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