SCTHS250N65G2G Datasheet - STMicroelectronics

datasheet Preview Page 1 from Datasheet4u.com

SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET

SCTHS250N65G2G Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTHS250N65G2G-STMicroelectronics.pdf

SCTHS250N65G2G Datasheet Preview — Preview of SCTHS250N65G2G PDF

Datasheet Details

Part number:

SCTHS250N65G2G

Manufacturer:

STMicroelectronics ↗

File Size:

260.34 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A
* AEC-Q101 qualified 1
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Main inverter (electric traction)

SCTHS250N65G2G Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTHS250N65G2G Automotive-grade silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTHS250N65G2G-like datasheet