STGB30V60DF Datasheet, Igbt, STMicroelectronics

STGB30V60DF Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Sa

PDF File Details

Part number:

STGB30V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

1.09MB

Download:

📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series

STGB30V60DF Application

• Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• V

TAGS

STGB30V60DF

STMicroelectronics

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