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STGB30V60F Trench gate field-stop IGBT

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Description

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 .
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 30 A
* Tight parameters distribution
* Safe paralleling

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

STGB30V60F Distributors

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📌 All Tags

STGB30V60F Trench gate field-stop IGBT STMicroelectronics
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