STGB30V60F Datasheet - STMicroelectronics

STGB30V60F Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos.

STGB30V60F Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inverters

* Uninterrupt

STGB30V60F Datasheet (1.41 MB)