STGB30V60F Datasheet, Igbt, STMicroelectronics

STGB30V60F Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Sa

PDF File Details

Part number:

STGB30V60F

Manufacturer:

STMicroelectronics ↗

File Size:

1.41MB

Download:

📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series o

STGB30V60F Application

• Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• V

TAGS

STGB30V60F

STMicroelectronics

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