STGP20IH65DF Datasheet (STMicroelectronics)

STGP20IH65DF, IGBT

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation.

A freewheeling diode with a low drop forward voltage is included.

The result

STGP20IH65DF Features

* Designed for soft-commutation

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.55 V (typ.) @ IC = 20 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Low drop voltage freewheeling co-packaged diod