STGP20M65DF2 - low-loss IGBT

STMicroelectronics

STGP20M65DF2 Datasheet Preview — Preview of STGP20M65DF2 PDF

Datasheet Details

Part number	STGP20M65DF2
Manufacturer	STMicroelectronics ↗
File Size	515.89 KB
Description	low-loss IGBT
Datasheet	STGP20M65DF2-STMicroelectronics.pdf

STGP20M65DF2 Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGP20M65DF2 Product summary Order

Features

High short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode G(1) C(2, TAB).

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Published: Mar 25, 2020 |