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STGP20M65DF2 low-loss IGBT

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Description

STGP20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT TAB TO-220 1 23 .
E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Features

* High short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance

Applications

* Motor control
* UPS
* PFC

STGP20M65DF2 Distributors

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