Description
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Feat.
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
3 2 1 1
3
* Tail-less switching off
* Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safe paralleling
* Low thermal
Applications
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction