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STH315N10F7-2 Datasheet - STMicroelectronics

STH315N10F7-2 N-channel Power MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product sum.

STH315N10F7-2 Features

* Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 180 A G(1) S(2, 3) f

STH315N10F7-2 Datasheet (446.25 KB)

Preview of STH315N10F7-2 PDF

Datasheet Details

Part number:

STH315N10F7-2

Manufacturer:

STMicroelectronics ↗

File Size:

446.25 KB

Description:

N-channel power mosfet.

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