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STH320N4F6-2 N-channel Power MOSFET

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Description

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These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

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Features

* STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ. , 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet
* production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package.
* Standard threshold drive
* 100% av

STH320N4F6-2 Distributors

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