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STH310N10F7-2 N-CHANNEL Power MOSFET

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Description

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - .
th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

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Features

* TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A
* Ultra low on-resistance

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STH310N10F7-2 N-CHANNEL Power MOSFET STMicroelectronics
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