Description
th
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.Order codes STH310N10F7-2 STH310N10F7-6
Table 1. Device summary
Marking
Package
310N10F7
2
H PAK-2
2
H PAK-6
Packaging Tape and reel
July 2013
This is information on a product in full production.DocID024040 Rev 2
1/19
www.st.com
Contents
Contents
STH310N10F7-2, STH310N10F7-6
1 Electrica
Features
- TAB
2 3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order codes
VDS RDS(on) max. ID
STH310N10F7-2 100 V
STH310N10F7-6
2.3 mΩ
180 A.
- Ultra low on-resistance.
- 100% avalanche tested.