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STH315N10F7-6, STH315N10F7-2 Datasheet - STMicroelectronics

STH315N10F7-6 Automotive-grade N-channel 100V 180A Power MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product sum.

STH315N10F7-6 Features

* TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

STH315N10F7-2-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STH315N10F7-6, STH315N10F7-2. Please refer to the document for exact specifications by model.
STH315N10F7-6 Datasheet Preview Page 2 STH315N10F7-6 Datasheet Preview Page 3

Datasheet Details

Part number:

STH315N10F7-6, STH315N10F7-2

Manufacturer:

STMicroelectronics ↗

File Size:

792.64 KB

Description:

Automotive-grade n-channel 100v 180a power mosfet.

Note:

This datasheet PDF includes multiple part numbers: STH315N10F7-6, STH315N10F7-2.
Please refer to the document for exact specifications by model.

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STH315N10F7-6 STH315N10F7-2 Automotive-grade N-channel 100V 180A Power MOSFET STMicroelectronics

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