Description
STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packag.
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, whil.
Features
* TAB 23 1
H2 PAK-2
TAB
7 1 H2 PAK-6
D(TAB)
D(TAB)
Order code STH315N10F7-2 STH315N10F7-6
VDS 100 V
RDS(on) max. 2.3 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
Applications
* S(2, 3) for
H2PAK-2
S(2, 3, 4, 5, 6, 7) for
H 2PAK-6
N-CHG1DTABS23_2_6