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STH360N4F6-2 N-channel Power MOSFET

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Description

STH360N4F6-2 .
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

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Features

* N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet
* preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package
* Low gate charge
* Very low on-resistance
* High avalanche ruggedne

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STH360N4F6-2 N-channel Power MOSFET STMicroelectronics
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