STH360N4F6-2 Datasheet (STMicroelectronics)

STH360N4F6-2, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

TAB 2 3 1 H2PAK-2 Figure 1.

Internal schematic diagram $4!" ' Table 1.

Device sum

STH360N4F6-2 Features

* N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet

* preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package

* Low gate charge

* Very low on-resistance

* High avalanche ruggedne