STH360N4F6-2 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

Part number	STH360N4F6-2
Manufacturer	STMicroelectronics ↗
File Size	232.91 KB
Description	N-channel Power MOSFET
Datasheet	STH360N4F6-2-STMicroelectronics.pdf

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet.
preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package.
Low gate charge.
Very low on-resistance.
High avalanche ruggedness.

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Published: Mar 17, 2016 |