STL210N4F7AG Datasheet (STMicroelectronics)

STL210N4F7AG, N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STL210N4F7AG Table 1: Device summary Markin

STL210N4F7AG Features

* Order code STL210N4F7AG V DS 40 V RDS(on) max 1.6 mΩ ID 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness

* Wett