STL24NM60N

N-channel Power MOSFET

STMicroelectronics

STL24NM60N Features

* Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case

* 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4X(6 Applications

* Swit

STL24NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STL24NM60N Datasheet (667.15 KB)