STL28N60DM2

N-CHANNEL POWER MOSFET

STMicroelectronics

STL28N60DM2 Features

* Order code STL28N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.175 Ω ID 21 A PTOT 140 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

STL28N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STL28N60DM2 Datasheet (618.47 KB)

STL28N60DM2 Datasheet Preview — Preview of STL28N60DM2 PDF

Datasheet Details

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STL28N60DM2

Manufacturer:

STMicroelectronics ↗

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618.47 KB

Description:

N-channel power mosfet.
STL28N60DM2 N-channel 600 V, 0.155 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data 5 4 32 1 PowerFL.

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STL28N60DM2 N-CHANNEL POWER MOSFET STMicroelectronics

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STL28N60DM2 Features

STL28N60DM2 General Description

Datasheet Details

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