STP25N10F7 Datasheet (STMicroelectronics)

STP25N10F7, N-CHANNEL POWER MOSFET

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1.

Device summary Marking Pac

STP25N10F7 Features

* Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V

* Ultra low on-resistance

* 100% avalanche tested Applications

* Switching applications 'Ć7$%