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STP25N06FI, STP25N06 Datasheet - ST Microelectronics

STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.065 Ω < 0.065 Ω ID 25 A 16 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s S.

STP25N06_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP25N06FI, STP25N06. Please refer to the document for exact specifications by model.
STP25N06FI Datasheet Preview Page 2 STP25N06FI Datasheet Preview Page 3

Datasheet Details

Part number:

STP25N06FI, STP25N06

Manufacturer:

STMicroelectronics ↗

File Size:

411.79 KB

Description:

N - channel enhancement mode power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP25N06FI, STP25N06.
Please refer to the document for exact specifications by model.

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STP25N06FI STP25N06 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

STP25N06FI Distributor