STP25N60M2-EP Datasheet (STMicroelectronics)

STP25N60M2-EP, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su

STP25N60M2-EP Features

* Order code VDS at TJ max. RDS(on) max. STP25N60M2-EP 650 V 0.188 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected Applications

* Switching